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Peak Electronics 256X64M-67E 2GB
Samsung V-GeN D4S4GL30A16TS5 4GB

Peak Electronics 256X64M-67E 2GB vs Samsung V-GeN D4S4GL30A16TS5 4GB

Overall score
star star star star star
Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Overall score
star star star star star
Samsung V-GeN D4S4GL30A16TS5 4GB

Samsung V-GeN D4S4GL30A16TS5 4GB

Differences Specifications Comments

Differences

Peak Electronics 256X64M-67E 2GB Reasons to consider
Peak Electronics 256X64M-67E 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    39 left arrow 62
    Around 37% lower latency
  • Faster reading speed, GB/s
    5 left arrow 16.7
    Average value in the tests
Samsung V-GeN D4S4GL30A16TS5 4GB Reasons to consider
Samsung V-GeN D4S4GL30A16TS5 4GB
Report a bug
  • Faster write speed, GB/s
    7.0 left arrow 1,597.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 5300
    Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications
Peak Electronics 256X64M-67E 2GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    39 left arrow 62
  • Read speed, GB/s
    5,022.9 left arrow 16.7
  • Write speed, GB/s
    1,597.0 left arrow 7.0
  • Memory bandwidth, mbps
    5300 left arrow 19200
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    753 left arrow 1808

Peak Electronics 256X64M-67E 2GB RAM comparisons

A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB

Samsung V-GeN D4S4GL30A16TS5 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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