PNY Electronics PNY 2GB vs INTENSO 4GB

Overall score

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score

INTENSO 4GB

INTENSO 4GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB

Reasons to consider
PNY Electronics PNY 2GB

Below the latency in the PassMark tests, ns

27 36

Around 25% lower latency
Faster reading speed, GB/s

13.8 12.1

Average value in the tests

INTENSO 4GB

Reasons to consider
INTENSO 4GB

Faster write speed, GB/s

9.3 8.4

Average value in the tests
Higher memory bandwidth, mbps

17000 10600

Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications

PNY Electronics PNY 2GB

INTENSO 4GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

27 36
Read speed, GB/s

13.8 12.1
Write speed, GB/s

8.4 9.3
Memory bandwidth, mbps

10600 17000

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2274 2061

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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