PNY Electronics PNY 2GB vs Samsung M378A1G44AB0-CWE 8GB

Overall score

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB

Reasons to consider
PNY Electronics PNY 2GB

Below the latency in the PassMark tests, ns

27 38

Around 29% lower latency

Samsung M378A1G44AB0-CWE 8GB

Reasons to consider
Samsung M378A1G44AB0-CWE 8GB

Faster reading speed, GB/s

16.5 13.8

Average value in the tests
Faster write speed, GB/s

10.9 8.4

Average value in the tests
Higher memory bandwidth, mbps

25600 10600

Around 2.42 higher bandwidth

Specifications

Complete list of technical specifications

PNY Electronics PNY 2GB

Samsung M378A1G44AB0-CWE 8GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

27 38
Read speed, GB/s

13.8 16.5
Write speed, GB/s

8.4 10.9
Memory bandwidth, mbps

10600 25600

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

2274 2829

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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