RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramos Technology EWB8GB681CA3-16IC 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Compare
Ramos Technology EWB8GB681CA3-16IC 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Overall score
Ramos Technology EWB8GB681CA3-16IC 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramos Technology EWB8GB681CA3-16IC 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
37
Around 32% lower latency
Faster reading speed, GB/s
15.3
9.5
Average value in the tests
Faster write speed, GB/s
9.8
7.7
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Report a bug
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Ramos Technology EWB8GB681CA3-16IC 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
37
Read speed, GB/s
15.3
9.5
Write speed, GB/s
9.8
7.7
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2646
1949
Ramos Technology EWB8GB681CA3-16IC 8GB RAM comparisons
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB RAM comparisons
Samsung M471B5173QH0-YK0 4GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Ramos Technology EWB8GB681CA3-16IC 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BL8G32C16U4WL.M8FE1 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CMD32GX4M4A2400C14 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston ACR26D4S9S1ME-4 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMT16GX4M2C3466C16 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Panram International Corporation W4U2400PS-4G 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston ACR32D4U2S8ME-16 16GB
SK Hynix HYMP112S64CP6-S6 1GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
Kingston KHX1600C9D3/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Kingston KHX1600C9D3/8G 8GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
Report a bug
×
Bug description
Source link