RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramos Technology EWB8GB681CA3-16IC 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Compare
Ramos Technology EWB8GB681CA3-16IC 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Overall score
Ramos Technology EWB8GB681CA3-16IC 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramos Technology EWB8GB681CA3-16IC 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
37
Around 32% lower latency
Faster reading speed, GB/s
15.3
9.5
Average value in the tests
Faster write speed, GB/s
9.8
7.7
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Report a bug
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Ramos Technology EWB8GB681CA3-16IC 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
37
Read speed, GB/s
15.3
9.5
Write speed, GB/s
9.8
7.7
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2646
1949
Ramos Technology EWB8GB681CA3-16IC 8GB RAM comparisons
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB RAM comparisons
Samsung M471B5173QH0-YK0 4GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905471-076.A00LF 8GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Crucial Technology BLS8G4D240FSC.16FARG 8GB
Kingston KF552C40-16 16GB
Corsair CMG32GX4M2D3600C18 16GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
Kingston 9905403-444.A00LF 4GB
SK Hynix HMA82GS6DJR8N-WM 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston KF3200C16D4/8GX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
AMD AE34G1601U1 4GB
Corsair CM4X4GF2400Z16K4 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 9905702-002.A00G 8GB
Corsair CMV4GX3M1B1600C11 4GB
Avant Technology J644GU44J9266NQ 32GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
Report a bug
×
Bug description
Source link