RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2666C19-8GSXK 8GB
Compare
Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-2666C19-8GSXK 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
G Skill Intl F4-2666C19-8GSXK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Reasons to consider
G Skill Intl F4-2666C19-8GSXK 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
25
Around -14% lower latency
Faster reading speed, GB/s
18.4
16.1
Average value in the tests
Faster write speed, GB/s
13.6
10.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2666C19-8GSXK 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
22
Read speed, GB/s
16.1
18.4
Write speed, GB/s
10.1
13.6
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2764
3222
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2666C19-8GSXK 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3000C15-16GVR 16GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston KVR24N17S8/4 4GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston XN205T-MIE2 16GB
Kingston 9905316-106.A02LF 1GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
AMD R538G1601U2S-UO 8GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
A-DATA Technology DOVF1B163G2G 2GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Hexon Technology Pte Ltd HEXON 1GB
A-DATA Technology DDR4 3600 8GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology CB8GS2400.C8JT 8GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMU32GX4M2C3000C15 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston 9905702-002.A00G 8GB
Samsung M471B5673FH0-CF8 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMW32GX4M4Z4000C18 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Samsung M471A5244CB0-CWE 4GB
Report a bug
×
Bug description
Source link