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Samsung 1600 CL10 Series 8GB
Teclast TLD416G26A30 16GB

Samsung 1600 CL10 Series 8GB vs Teclast TLD416G26A30 16GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Teclast TLD416G26A30 16GB

Teclast TLD416G26A30 16GB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 36
    Around 31% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 15.9
    Average value in the tests
Teclast TLD416G26A30 16GB Reasons to consider
Teclast TLD416G26A30 16GB
Report a bug
  • Faster write speed, GB/s
    13.1 left arrow 10.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Teclast TLD416G26A30 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 36
  • Read speed, GB/s
    16.1 left arrow 15.9
  • Write speed, GB/s
    10.1 left arrow 13.1
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 2719

Samsung 1600 CL10 Series 8GB RAM comparisons

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Teclast TLD416G26A30 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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