RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
15.6
Average value in the tests
Faster write speed, GB/s
2,123.3
12.1
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
59
Around -146% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
24
Read speed, GB/s
4,833.8
15.6
Write speed, GB/s
2,123.3
12.1
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
731
2852
Samsung M3 78T2863EHS-CF7 1GB RAM comparisons
Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Golden Empire CL14-16-16 D4-2400 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston HP26D4U9D8HC-16X 16GB
Kingston 99U5584-001.A00LF 4GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
Kingston ACR256X64D3S1333C9 2GB
Mushkin MRX4U300GJJM16G 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Crucial Technology BLS8G4D240FSB.16FBD? 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMH16GX4M2D3600C18 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-3000C14-16GVK 16GB
Samsung M378B5773DH0-CH9 2GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMT32GX4M4C3600C18 8GB
Samsung 16KTF1G64AZ-1G9P1 8GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-2666C18-4GRS 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
SK Hynix HMT451U6AFR8C-PB 4GB
Crucial Technology 8G4US2400.M8B1 8GB
Report a bug
×
Bug description
Source link