RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
18.7
Average value in the tests
Reasons to consider
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
46
Around -59% lower latency
Faster write speed, GB/s
15.9
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
21300
3200
Around 6.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
29
Read speed, GB/s
2,909.8
18.7
Write speed, GB/s
1,519.2
15.9
Memory bandwidth, mbps
3200
21300
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
3-3-3-12 / 400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
241
3594
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5173QH0-YK0 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology D22.23263S.002 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Kingston KCRXJ6-HYJ 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Peak Electronics 256X64M-67E 2GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
Kingston KHX1600C9D3/8G 8GB
Samsung M378A5244CB0-CTD 4GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Kingston 9965433-034.A00LF 4GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Samsung M393B1G70BH0-CK0 8GB
Kingston KHX2133C15S4/8G 8GB
Kingston 9965525-140.A00LF 8GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology BL16G26C16U4W.16FD 16GB
Hexon Technology Pte Ltd HEXON 1GB
A-DATA Technology DDR4 3600 2OZ 8GB
Report a bug
×
Bug description
Source link