RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CE6 2GB
Panram International Corporation D4U2666P-8G 8GB
Compare
Samsung M3 78T5663RZ3-CE6 2GB vs Panram International Corporation D4U2666P-8G 8GB
Overall score
Samsung M3 78T5663RZ3-CE6 2GB
Overall score
Panram International Corporation D4U2666P-8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
4
16.2
Average value in the tests
Reasons to consider
Panram International Corporation D4U2666P-8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
21
60
Around -186% lower latency
Faster write speed, GB/s
7.6
2,168.2
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Panram International Corporation D4U2666P-8G 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
21
Read speed, GB/s
4,595.2
16.2
Write speed, GB/s
2,168.2
7.6
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
941
2337
Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
Panram International Corporation D4U2666P-8G 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hexon Technology Pte Ltd HEXON 1GB
Kingston HP24D4U7S8MBP-4 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Panram International Corporation D4U2666P-8G 8GB
Samsung M378B5673FH0-CH9 2GB
Samsung M471A2G43BB2-CWE 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CM4B8G1L2666A18S4 8GB
Samsung M391B5673EH1-CH9 2GB
Transcend Information JM2666HLE-16G 16GB
Kingston 99U5469-045.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
Kingston KP223C-ELD 2GB
G Skill Intl F4-3000C15-4GVSB 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston MSI24D4S7S8S8-8 8GB
Crucial Technology CT25664BA160B.C16F 2GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
AMD AE34G1601U1 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Asgard VMA45UG-MEC1U2AW1 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Hewlett-Packard 7TE39AA#ABC 8GB
Report a bug
×
Bug description
Source link