RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905625-097.A00G 16GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Kingston 9905625-097.A00G 16GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Kingston 9905625-097.A00G 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
17.2
Average value in the tests
Faster write speed, GB/s
2,622.0
12.1
Average value in the tests
Reasons to consider
Kingston 9905625-097.A00G 16GB
Report a bug
Below the latency in the PassMark tests, ns
29
77
Around -166% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905625-097.A00G 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
29
Read speed, GB/s
3,405.2
17.2
Write speed, GB/s
2,622.0
12.1
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
763
2809
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Kingston 9905625-097.A00G 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5458-008.A00LF 4GB
Gloway International (HK) STKD4GAM2400-F 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
G Skill Intl F4-3600C18-32GTZR 32GB
AMD AE34G1601U1 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
SK Hynix HYMP512S64CP8-Y5 1GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Samsung M393B5270CH0-CH9 4GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
SK Hynix HMT325S6CFR8C-H9 2GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
Kingston 9905403-515.A00LF 8GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston MSI24D4U7D8MH-16 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Samsung M471A2K43BB1-CTD 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
SK Hynix HMT325U6EFR8C-PB 2GB
Kingston ACR256X64D3S13C9G 2GB
Report a bug
×
Bug description
Source link