RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
15.3
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Report a bug
Below the latency in the PassMark tests, ns
72
77
Around -7% lower latency
Faster write speed, GB/s
8.0
2,622.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
72
Read speed, GB/s
3,405.2
15.3
Write speed, GB/s
2,622.0
8.0
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
763
1593
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston ACR256X64D3S1333C9 2GB
Ramaxel Technology RMUA5110MH78HAF-2666 8GB
Samsung M471B5173QH0-YK0 4GB
Samsung M378A1K43DB2-CTD 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT16G4DFD824A.M16FH 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology HMA81GU6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK4GX4M1A2400C14 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M471A1G43EB1-CRC 8GB
Samsung M393A1G40DB0-CPB 8GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
Kingston HP16D3LS1KBGH/4G 4GB
G Skill Intl F4-3600C14-16GVK 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-4000C19-16GTZKK 16GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT16G4DFD832A.C16FJ 16GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kingston 9905701-010.A00G 16GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMK8GX4M2B3733C17 4GB
Report a bug
×
Bug description
Source link