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Samsung M378A1G43EB1-CPB 8GB
Corsair CMW32GX4M4D3600C16 8GB

Samsung M378A1G43EB1-CPB 8GB vs Corsair CMW32GX4M4D3600C16 8GB

Overall score
star star star star star
Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

Overall score
star star star star star
Corsair CMW32GX4M4D3600C16 8GB

Corsair CMW32GX4M4D3600C16 8GB

Differences Specifications Comments

Differences

Samsung M378A1G43EB1-CPB 8GB Reasons to consider
Samsung M378A1G43EB1-CPB 8GB
Report a bug
Corsair CMW32GX4M4D3600C16 8GB Reasons to consider
Corsair CMW32GX4M4D3600C16 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 34
    Around -31% lower latency
  • Faster reading speed, GB/s
    19.9 left arrow 15.4
    Average value in the tests
  • Faster write speed, GB/s
    17.1 left arrow 11.5
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M378A1G43EB1-CPB 8GB
Corsair CMW32GX4M4D3600C16 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    34 left arrow 26
  • Read speed, GB/s
    15.4 left arrow 19.9
  • Write speed, GB/s
    11.5 left arrow 17.1
  • Memory bandwidth, mbps
    17000 left arrow 17000
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2763 left arrow 3972

Samsung M378A1G43EB1-CPB 8GB RAM comparisons

Samsung M378A1K43BB1-CPB 8GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB

Corsair CMW32GX4M4D3600C16 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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