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Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-4266C17-8GTZRB 8GB

Samsung M378A1K43EB2-CWE 8GB vs G Skill Intl F4-4266C17-8GTZRB 8GB

Overall score
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Overall score
star star star star star
G Skill Intl F4-4266C17-8GTZRB 8GB

G Skill Intl F4-4266C17-8GTZRB 8GB

Differences Specifications Comments

Differences

Samsung M378A1K43EB2-CWE 8GB Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
  • Higher memory bandwidth, mbps
    25600 left arrow 17000
    Around 1.51% higher bandwidth
G Skill Intl F4-4266C17-8GTZRB 8GB Reasons to consider
G Skill Intl F4-4266C17-8GTZRB 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 33
    Around -32% lower latency
  • Faster reading speed, GB/s
    18.3 left arrow 17.6
    Average value in the tests
  • Faster write speed, GB/s
    16.3 left arrow 12.0
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-4266C17-8GTZRB 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    33 left arrow 25
  • Read speed, GB/s
    17.6 left arrow 18.3
  • Write speed, GB/s
    12.0 left arrow 16.3
  • Memory bandwidth, mbps
    25600 left arrow 17000
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2910 left arrow 3849

Samsung M378A1K43EB2-CWE 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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G Skill Intl F4-4266C17-8GTZRB 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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