RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A2K43EB1-CWE 16GB
Samsung M393A1G43DB1-CRC 8GB
Compare
Samsung M378A2K43EB1-CWE 16GB vs Samsung M393A1G43DB1-CRC 8GB
Overall score
Samsung M378A2K43EB1-CWE 16GB
Overall score
Samsung M393A1G43DB1-CRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A2K43EB1-CWE 16GB
Report a bug
Faster reading speed, GB/s
18.5
10.8
Average value in the tests
Faster write speed, GB/s
13.8
8.5
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Samsung M393A1G43DB1-CRC 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
33
Around -3% lower latency
Specifications
Complete list of technical specifications
Samsung M378A2K43EB1-CWE 16GB
Samsung M393A1G43DB1-CRC 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
32
Read speed, GB/s
18.5
10.8
Write speed, GB/s
13.8
8.5
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3341
2349
Samsung M378A2K43EB1-CWE 16GB RAM comparisons
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393A1G43DB1-CRC 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Crucial Technology C 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Avant Technology W6451U66J9266ND 4GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
G Skill Intl F4-4800C20-16GTZR 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMSX16GX4M2A3200C22 8GB
Samsung M471B5273EB0-CK0 4GB
Kingston 9965600-011.A01G 16GB
Kingston 99U5471-012.A00LF 4GB
G Skill Intl F4-3333C16-8GVR 8GB
Kingston 99U5584-017.A00LF 4GB
Kingston 9905665-021.A00G 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-2666C19-16GRS 16GB
Hynix Semiconductor (Hyundai Electronics) HMP125S6EFR8C
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
SpecTek Incorporated ?????????????????? 2GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Samsung M393B1K70CH0-CH9 8GB
SK Hynix HMA41GU7AFR8N-TF 8GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9905678-105.A00G 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3200C14-8GTZKO 8GB
Report a bug
×
Bug description
Source link