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Samsung M378B5273EB0-CK0 4GB
Gloway International (HK) STK2400CL17SNB16GB 16GB

Samsung M378B5273EB0-CK0 4GB vs Gloway International (HK) STK2400CL17SNB16GB 16GB

Overall score
star star star star star
Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

Overall score
star star star star star
Gloway International (HK) STK2400CL17SNB16GB 16GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

Differences Specifications Comments

Differences

Samsung M378B5273EB0-CK0 4GB Reasons to consider
Samsung M378B5273EB0-CK0 4GB
Report a bug
Gloway International (HK) STK2400CL17SNB16GB 16GB Reasons to consider
Gloway International (HK) STK2400CL17SNB16GB 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    23 left arrow 37
    Around -61% lower latency
  • Faster reading speed, GB/s
    17.5 left arrow 14.6
    Average value in the tests
  • Faster write speed, GB/s
    13.2 left arrow 9.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5273EB0-CK0 4GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    37 left arrow 23
  • Read speed, GB/s
    14.6 left arrow 17.5
  • Write speed, GB/s
    9.6 left arrow 13.2
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2409 left arrow 3171

Samsung M378B5273EB0-CK0 4GB RAM comparisons

Kingston KVR24N17S8/4 4GB
Samsung M378A5244BB0-CRC 4GB

Gloway International (HK) STK2400CL17SNB16GB 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
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