Samsung M378B5673EH1-CF8 2GB vs Micron Technology 18ASF1G72PZ-2G3B1 8GB

Overall score

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB

Reasons to consider
Samsung M378B5673EH1-CF8 2GB

Below the latency in the PassMark tests, ns

28 45

Around 38% lower latency
Faster reading speed, GB/s

12.7 11.7

Average value in the tests
Higher memory bandwidth, mbps

8500 1900

Around 4.47% higher bandwidth

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Reasons to consider
Micron Technology 18ASF1G72PZ-2G3B1 8GB

Faster write speed, GB/s

8.4 7.5

Average value in the tests

Specifications

Complete list of technical specifications

Samsung M378B5673EH1-CF8 2GB

Micron Technology 18ASF1G72PZ-2G3B1 8GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

28 45
Read speed, GB/s

12.7 11.7
Write speed, GB/s

7.5 8.4
Memory bandwidth, mbps

8500 1900

Other

Description

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-1900, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

7-7-7-20 / 1066 MHz no data
Ranking PassMark (The more the better)

1988 2387

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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