RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673EH1-CF8 2GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Micron Technology 4ATF1G64HZ-3G2B2 8GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
39
Around 28% lower latency
Reasons to consider
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Report a bug
Faster reading speed, GB/s
16.1
12.7
Average value in the tests
Faster write speed, GB/s
11.9
7.5
Average value in the tests
Higher memory bandwidth, mbps
25600
8500
Around 3.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
39
Read speed, GB/s
12.7
16.1
Write speed, GB/s
7.5
11.9
Memory bandwidth, mbps
8500
25600
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
7-7-7-20 / 1066 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1988
2782
Samsung M378B5673EH1-CF8 2GB RAM comparisons
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-515.A00LF 8GB
Crucial Technology BLS8G4D26BFSE.16FBD2 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3600C18-32GTRG 32GB
Samsung M378B5273EB0-CK0 4GB
Teikon TMA851U6CJR6N-VKSC 4GB
Strontium EVMT8G1600U86S 8GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
Kingston ACR256X64D3S1333C9 2GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Kingston 99U5471-056.A00LF 8GB
V-Color Technology Inc. TD416G26D819-VC 16GB
Samsung M378A1K43EB2-CWE 8GB
SK Hynix GKE800SO102408-2400 8GB
Team Group Inc. Team-Elite-1333 4GB
Transcend Information JM3200HLB-16GK 8GB
Kingston 99U5474-037.A00LF 4GB
G Skill Intl F4-2400C17-8GISM 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 8ATF1G64AZ-2G1B1 8GB
Samsung M471B5173DB0-YK0 4GB
AMD R744G2606U1S 4GB
Report a bug
×
Bug description
Source link