Samsung M378B5673EH1-CF8 2GB vs NSITEXE Inc Visenta 16GB

Overall score

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score

NSITEXE Inc Visenta 16GB

NSITEXE Inc Visenta 16GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB

Reasons to consider
Samsung M378B5673EH1-CF8 2GB

Below the latency in the PassMark tests, ns

28 58

Around 52% lower latency

NSITEXE Inc Visenta 16GB

Reasons to consider
NSITEXE Inc Visenta 16GB

Faster reading speed, GB/s

18 12.7

Average value in the tests
Faster write speed, GB/s

8.2 7.5

Average value in the tests
Higher memory bandwidth, mbps

21300 8500

Around 2.51 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M378B5673EH1-CF8 2GB

NSITEXE Inc Visenta 16GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

28 58
Read speed, GB/s

12.7 18.0
Write speed, GB/s

7.5 8.2
Memory bandwidth, mbps

8500 21300

Other

Description

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

1988 2025

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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