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Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3600C19-8GSXKB 8GB

Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-3600C19-8GSXKB 8GB

Overall score
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Overall score
star star star star star
G Skill Intl F4-3600C19-8GSXKB 8GB

G Skill Intl F4-3600C19-8GSXKB 8GB

Differences Specifications Comments

Differences

Samsung M391B5673EH1-CH9 2GB Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 28
    Around 7% lower latency
G Skill Intl F4-3600C19-8GSXKB 8GB Reasons to consider
G Skill Intl F4-3600C19-8GSXKB 8GB
Report a bug
  • Faster reading speed, GB/s
    18.6 left arrow 12.8
    Average value in the tests
  • Faster write speed, GB/s
    15.4 left arrow 9.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3600C19-8GSXKB 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    26 left arrow 28
  • Read speed, GB/s
    12.8 left arrow 18.6
  • Write speed, GB/s
    9.0 left arrow 15.4
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2143 left arrow 3519

Samsung M391B5673EH1-CH9 2GB RAM comparisons

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

G Skill Intl F4-3600C19-8GSXKB 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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