RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Compare
Samsung M393B1G70BH0-YK0 8GB vs Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Overall score
Samsung M393B1G70BH0-YK0 8GB
Overall score
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-YK0 8GB
Report a bug
Reasons to consider
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
49
Around -75% lower latency
Faster reading speed, GB/s
18.5
10.2
Average value in the tests
Faster write speed, GB/s
14.4
8.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
28
Read speed, GB/s
10.2
18.5
Write speed, GB/s
8.1
14.4
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2465
3402
Samsung M393B1G70BH0-YK0 8GB RAM comparisons
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB RAM comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3333C16-16GVK 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMV4GX3M1A1333C9 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-4800C18-8GTRG 8GB
Samsung M395T2863QZ4-CF76 1GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-3600C19-8GSXKB 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905744-035.A00G 16GB
Kingston HP16D3LS1KFG/4G 4GB
Patriot Memory (PDP Systems) PSD34G1600L81S 4GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology BLS16G4D240FSB.16FD 16GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2133C15-8GFT 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
PNY Electronics PNY 2GB
SK Hynix HMA425S6AFR6N-UH 2GB
Report a bug
×
Bug description
Source link