Samsung M393B1G70BH0-YK0 8GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Overall score

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Overall score

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Differences Specifications Comments

Differences

Samsung M393B1G70BH0-YK0 8GB

Reasons to consider
Samsung M393B1G70BH0-YK0 8GB

Below the latency in the PassMark tests, ns

49 73

Around 33% lower latency
Faster write speed, GB/s

8.1 7.9

Average value in the tests

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Reasons to consider
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Faster reading speed, GB/s

15.1 10.2

Average value in the tests
Higher memory bandwidth, mbps

19200 12800

Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M393B1G70BH0-YK0 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

49 73
Read speed, GB/s

10.2 15.1
Write speed, GB/s

8.1 7.9
Memory bandwidth, mbps

12800 19200

Other

Description

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2465 1724

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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