RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1K70QB0-CK0 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Compare
Samsung M393B1K70QB0-CK0 8GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Overall score
Samsung M393B1K70QB0-CK0 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1K70QB0-CK0 8GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
47
Around -96% lower latency
Faster reading speed, GB/s
15.6
10.4
Average value in the tests
Faster write speed, GB/s
12.1
7.8
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1K70QB0-CK0 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
47
24
Read speed, GB/s
10.4
15.6
Write speed, GB/s
7.8
12.1
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2169
2852
Samsung M393B1K70QB0-CK0 8GB RAM comparisons
V-Color Technology Inc. TD8G16C10-OC18AK 8GB
Kingston 9905430-400.A00LF 2GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT325U6CFR8C-PB 2GB
AMD R748G2133U2S-UO 8GB
Corsair VS1GB800D2 1GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Kingston ACR512X64D3S13C9G 4GB
Kingston KHX2400C15D4/4G 4GB
SK Hynix HYMP112U64CP8-S5 1GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Essencore Limited KD4AGU880-32A160T 16GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
G Skill Intl F3-1866C8-8GTX 8GB
DSL Memory D4SS1G081SH24A-A 8GB
Kingston KF552C40-16 16GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
Samsung M3 91T2953GZ3-CF7 1GB
G Skill Intl F4-3000C15-8GVS 8GB
SK Hynix DDR2 800 2G 2GB
Avant Technology W641GU42J9266NB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology W642GU44J2320NC 16GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Corsair VS1GB800D2 1GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
Report a bug
×
Bug description
Source link