RAM comparison Samsung M395T2863QZ4-CF76 1GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Samsung M395T2863QZ4-CF76 1GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Overall score

Samsung M395T2863QZ4-CF76 1GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M395T2863QZ4-CF76 1GB

Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Below the latency in the PassMark tests, ns

31 104

Around -235% lower latency
Higher memory bandwidth, mbps

25600 6400

Around 4 higher bandwidth

Complete list of technical specifications

Samsung M395T2863QZ4-CF76 1GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Main characteristics

Other

Description

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed

no data 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

786 3649

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns