RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T5160QZ4-CE66 2GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
Compare
Samsung M395T5160QZ4-CE66 2GB vs Gloway International Co. Ltd. STK4U2400D17082C 8GB
Overall score
Samsung M395T5160QZ4-CE66 2GB
Overall score
Gloway International Co. Ltd. STK4U2400D17082C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T5160QZ4-CE66 2GB
Report a bug
Faster reading speed, GB/s
2
17.5
Average value in the tests
Faster write speed, GB/s
2,072.7
12.9
Average value in the tests
Reasons to consider
Gloway International Co. Ltd. STK4U2400D17082C 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
75
Around -241% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T5160QZ4-CE66 2GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
75
22
Read speed, GB/s
2,730.3
17.5
Write speed, GB/s
2,072.7
12.9
Memory bandwidth, mbps
5300
19200
Other
Description
PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
858
3083
Samsung M395T5160QZ4-CE66 2GB RAM comparisons
Samsung M395T5160QZ4-CE65 2GB
Apacer Technology GD2.1831WS.002 16GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2K4500C19 8GB
Samsung M378B5773CH0-CK0 2GB
AMD R7S48G2400U2S 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Teclast TLD416G26A30 16GB
Corsair CMD8GX3M2A2800C12 4GB
Golden Empire CL16-16-16 D4-2800 8GB
Kingston KHX1600C9D3/4G 4GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3200C14-8GTZKO 8GB
Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-3000C16-8GSXFB 8GB
Corsair CMY8GX3M2A2666C10 4GB
SK Hynix HMAA4GU6AJR8N-XN 32GB
Kingston KHX2800C14D4/8GX 8GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
Samsung M3 78T3354BZ0-CCC 256MB
AMD R7416G2400U2S 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
Report a bug
×
Bug description
Source link