Samsung M4 70T2864QZ3-CE6 1GB vs Samsung M4 70T2864EH3-CF7 1GB

Overall score

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

Overall score

Samsung M4 70T2864EH3-CF7 1GB

Samsung M4 70T2864EH3-CF7 1GB

Differences Specifications Comments

Differences

Samsung M4 70T2864QZ3-CE6 1GB

Reasons to consider
Samsung M4 70T2864QZ3-CE6 1GB

Below the latency in the PassMark tests, ns

65 70

Around 7% lower latency
Faster reading speed, GB/s

3 3

Average value in the tests

Samsung M4 70T2864EH3-CF7 1GB

Reasons to consider
Samsung M4 70T2864EH3-CF7 1GB

Faster write speed, GB/s

1,643.2 1,574.4

Average value in the tests
Higher memory bandwidth, mbps

6400 5300

Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864EH3-CF7 1GB

Main characteristics

Memory type

DDR2 DDR2
Latency in PassMark, ns

65 70
Read speed, GB/s

3,858.9 3,279.9
Write speed, GB/s

1,574.4 1,643.2
Memory bandwidth, mbps

5300 6400

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
Timings / Clock speed

5-5-5-15 / 667 MHz 5-5-5-15 / 800 MHz
Ranking PassMark (The more the better)

607 454

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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