RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T2953EZ3-CE6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Compare
Samsung M4 70T2953EZ3-CE6 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Overall score
Samsung M4 70T2953EZ3-CE6 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB
Report a bug
Faster reading speed, GB/s
3
10.2
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Report a bug
Below the latency in the PassMark tests, ns
35
73
Around -109% lower latency
Faster write speed, GB/s
7.4
1,423.3
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
73
35
Read speed, GB/s
3,510.5
10.2
Write speed, GB/s
1,423.3
7.4
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
476
2124
Samsung M4 70T2953EZ3-CE6 1GB RAM comparisons
Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB RAM comparisons
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-3200C16-8GVGB 8GB
Kingston 99U5471-020.A00LF 4GB
Samsung M471A2K43DB1-CWE 16GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3400C16-8GTZKW 8GB
AMD R5316G1609U2K 8GB
Corsair CMR64GX4M8C3200C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
Kingston 99U5584-010.A00LF 4GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
SK Hynix HYMP125S64CP8-S6 2GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CB16GU2666.C8ET 16GB
Report a bug
×
Bug description
Source link