RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T2953EZ3-CE6 1GB
Kingston 9905744-066.A00G 32GB
Compare
Samsung M4 70T2953EZ3-CE6 1GB vs Kingston 9905744-066.A00G 32GB
Overall score
Samsung M4 70T2953EZ3-CE6 1GB
Overall score
Kingston 9905744-066.A00G 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB
Report a bug
Faster reading speed, GB/s
3
17.8
Average value in the tests
Reasons to consider
Kingston 9905744-066.A00G 32GB
Report a bug
Below the latency in the PassMark tests, ns
47
73
Around -55% lower latency
Faster write speed, GB/s
14.7
1,423.3
Average value in the tests
Higher memory bandwidth, mbps
25600
5300
Around 4.83 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
Kingston 9905744-066.A00G 32GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
73
47
Read speed, GB/s
3,510.5
17.8
Write speed, GB/s
1,423.3
14.7
Memory bandwidth, mbps
5300
25600
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
476
3099
Samsung M4 70T2953EZ3-CE6 1GB RAM comparisons
Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB
Kingston 9905744-066.A00G 32GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Kingston 99U5474-038.A00LF 4GB
Kingston HX426C16FB2/8-SP 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
Corsair CML16GX3M2A1600C10 8GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Samsung M393B1G70BH0-YK0 8GB
Mushkin MR[A/B]4U360JNNM8G 8GB
AMD AE34G1601U1 4GB
Corsair CM4X16GE2400Z16K4 16GB
Samsung M471B5173DB0-YK0 4GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BL16G32C16U4RL.M16FE 16GB
Kingston KHX1600C9D3/4G 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-3200C16-8GVK 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Teikon TMA851S6CJR6N-VKSC 4GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KF9 2GB
Kingston 9905316-106.A02LF 1GB
Heoriady M378A1K43BB2-CTD 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Report a bug
×
Bug description
Source link