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Samsung M471A1K43DB1-CTD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

Samsung M471A1K43DB1-CTD 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

Overall score
star star star star star
Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

Differences Specifications Comments

Differences

Samsung M471A1K43DB1-CTD 8GB Reasons to consider
Samsung M471A1K43DB1-CTD 8GB
Report a bug
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 35
    Around -35% lower latency
  • Faster reading speed, GB/s
    17.7 left arrow 15.7
    Average value in the tests
  • Faster write speed, GB/s
    14.0 left arrow 11.8
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M471A1K43DB1-CTD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 26
  • Read speed, GB/s
    15.7 left arrow 17.7
  • Write speed, GB/s
    11.8 left arrow 14.0
  • Memory bandwidth, mbps
    21300 left arrow 21300
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2767 left arrow 3017

Samsung M471A1K43DB1-CTD 8GB RAM comparisons

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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