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Samsung M471A1K43DB1-CWE 8GB
Corsair CMK16GX4M2B3200C16 8GB

Samsung M471A1K43DB1-CWE 8GB vs Corsair CMK16GX4M2B3200C16 8GB

Overall score
star star star star star
Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Overall score
star star star star star
Corsair CMK16GX4M2B3200C16 8GB

Corsair CMK16GX4M2B3200C16 8GB

Differences Specifications Comments

Differences

Samsung M471A1K43DB1-CWE 8GB Reasons to consider
Samsung M471A1K43DB1-CWE 8GB
Report a bug
  • Higher memory bandwidth, mbps
    25600 left arrow 17000
    Around 1.51% higher bandwidth
Corsair CMK16GX4M2B3200C16 8GB Reasons to consider
Corsair CMK16GX4M2B3200C16 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 33
    Around -18% lower latency
  • Faster reading speed, GB/s
    18.3 left arrow 16.1
    Average value in the tests
  • Faster write speed, GB/s
    14.5 left arrow 13.0
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M471A1K43DB1-CWE 8GB
Corsair CMK16GX4M2B3200C16 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    33 left arrow 28
  • Read speed, GB/s
    16.1 left arrow 18.3
  • Write speed, GB/s
    13.0 left arrow 14.5
  • Memory bandwidth, mbps
    25600 left arrow 17000
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2987 left arrow 3454

Samsung M471A1K43DB1-CWE 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMK16GX4M2B3200C16 8GB RAM comparisons

Corsair CMK16GX4M2F4400C19 8GB
Corsair CMK16GX4M2K4000C19 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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