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Samsung M471B5773DH0-CK0 2GB
G Skill Intl F4-3200C16-8GTZN 8GB

Samsung M471B5773DH0-CK0 2GB vs G Skill Intl F4-3200C16-8GTZN 8GB

Overall score
star star star star star
Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Overall score
star star star star star
G Skill Intl F4-3200C16-8GTZN 8GB

G Skill Intl F4-3200C16-8GTZN 8GB

Differences Specifications Comments

Differences

Samsung M471B5773DH0-CK0 2GB Reasons to consider
Samsung M471B5773DH0-CK0 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 28
    Around 4% lower latency
G Skill Intl F4-3200C16-8GTZN 8GB Reasons to consider
G Skill Intl F4-3200C16-8GTZN 8GB
Report a bug
  • Faster reading speed, GB/s
    19.7 left arrow 12.2
    Average value in the tests
  • Faster write speed, GB/s
    15.6 left arrow 7.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5773DH0-CK0 2GB
G Skill Intl F4-3200C16-8GTZN 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 28
  • Read speed, GB/s
    12.2 left arrow 19.7
  • Write speed, GB/s
    7.8 left arrow 15.6
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1763 left arrow 3717

Samsung M471B5773DH0-CK0 2GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB

G Skill Intl F4-3200C16-8GTZN 8GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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