RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Compare
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs G Skill Intl F4-4000C16-16GTZRA 16GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Overall score
G Skill Intl F4-4000C16-16GTZRA 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
28
Around 21% lower latency
Higher memory bandwidth, mbps
21300
17000
Around 1.25% higher bandwidth
Reasons to consider
G Skill Intl F4-4000C16-16GTZRA 16GB
Report a bug
Faster reading speed, GB/s
20.9
17.7
Average value in the tests
Faster write speed, GB/s
17.4
12.7
Average value in the tests
Specifications
Complete list of technical specifications
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
22
28
Read speed, GB/s
17.7
20.9
Write speed, GB/s
12.7
17.4
Memory bandwidth, mbps
21300
17000
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
3075
3963
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM comparisons
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
G Skill Intl F4-4000C16-16GTZRA 16GB RAM comparisons
Samsung M378A1K43DB2-CTD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMU32GX4M4C3000C15 8GB
A-DATA Technology DDR3 1333G 2GB
Corsair CMK32GX4M4B3733C17 8GB
Kingston 99U5471-056.A00LF 8GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQVE1908 512MB
Corsair CMD32GX4M2C3200C14T 16GB
AMD R5316G1609U2K 8GB
Samsung M471A5143DB0-CPB 4GB
Samsung M393B1K70QB0-CK0 8GB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
SK Hynix HYMP125U64CP8-S6 2GB
A-DATA Technology AD4U240038G17-BHYA 8GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
G Skill Intl F4-4400C19-32GTZR 32GB
Kingston KVR533D2N4 512MB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
G Skill Intl F4-3200C16-8GVS 8GB
Corsair VSA2GSDS667C4 2GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Kingston 99U5474-013.A00LF 2GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-2400C17-4GFT 4GB
Report a bug
×
Bug description
Source link