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SK Hynix DDR2 800 2G 2GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB

SK Hynix DDR2 800 2G 2GB vs Micron Technology 18ASF1G72AZ-2G1B1 8GB

Overall score
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Overall score
star star star star star
Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Differences Specifications Comments

Differences

SK Hynix DDR2 800 2G 2GB Reasons to consider
SK Hynix DDR2 800 2G 2GB
Report a bug
Micron Technology 18ASF1G72AZ-2G1B1 8GB Reasons to consider
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 77
    Around -133% lower latency
  • Faster reading speed, GB/s
    9.6 left arrow 2
    Average value in the tests
  • Faster write speed, GB/s
    8.6 left arrow 1,884.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix DDR2 800 2G 2GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 33
  • Read speed, GB/s
    2,936.9 left arrow 9.6
  • Write speed, GB/s
    1,884.0 left arrow 8.6
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    564 left arrow 2286

SK Hynix DDR2 800 2G 2GB RAM comparisons

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
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