RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Compare
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Chun Well Technology Holding Limited D4U1636144B 16GB
Overall score
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Overall score
Chun Well Technology Holding Limited D4U1636144B 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Report a bug
Faster reading speed, GB/s
3
23.7
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited D4U1636144B 16GB
Report a bug
Below the latency in the PassMark tests, ns
26
63
Around -142% lower latency
Faster write speed, GB/s
18.3
1,447.3
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
26
Read speed, GB/s
3,231.0
23.7
Write speed, GB/s
1,447.3
18.3
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
478
4124
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM comparisons
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Chun Well Technology Holding Limited D4U1636144B 16GB RAM comparisons
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-2666C12-8GTXD 8GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
Kingston KHX2133C11D3/4GX 4GB
Kingston HP26D4S9S8ME-8 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston XF875V-MIH 8GB
Kingston ACR512X64D3S13C9G 4GB
Apacer Technology 78.DAGQ7.40B0B 16GB
Kingston KHX1600C9D3/8G 8GB
Mushkin MRA4S320GJJM32G 32GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
Team Group Inc. Team-Elite-1333 4GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
Samsung M378B5673EH1-CF8 2GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Samsung M471B5173QH0-YK0 4GB
Samsung M471A4G43AB1-CWE 32GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-2800C16-4GRR 4GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3600C16-8GTZR 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Ramaxel Technology RMSA3260ME78HAF-2666 8GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-2933C16-8GTZRX 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
Report a bug
×
Bug description
Source link