RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M393A2K43BB1-CRC 16GB
Compare
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Samsung M393A2K43BB1-CRC 16GB
Overall score
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Overall score
Samsung M393A2K43BB1-CRC 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Report a bug
Faster reading speed, GB/s
3
10.4
Average value in the tests
Reasons to consider
Samsung M393A2K43BB1-CRC 16GB
Report a bug
Below the latency in the PassMark tests, ns
53
63
Around -19% lower latency
Faster write speed, GB/s
7.8
1,447.3
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M393A2K43BB1-CRC 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
53
Read speed, GB/s
3,231.0
10.4
Write speed, GB/s
1,447.3
7.8
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
478
2333
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM comparisons
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Samsung M393A2K43BB1-CRC 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3600C16-8GTESC 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Transcend Information TS512MLH64V4H 4GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3600C16-16GTZRC 16GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-2400C17-4GVR 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Peak Electronics 256X64M-67E 2GB
Gloway International (HK) STK4U2400D17041C 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Patriot Memory (PDP Systems) PSD34G160081 4GB
Kingston KP223C-ELD 2GB
G Skill Intl F4-2133C15-4GRR 4GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2133C15-8GRR2 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Corsair CM4X16GE2666C18S2 16GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMU32GX4M2C3000C15 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
A-DATA Technology DDR4 2400 2OZ 8GB
Kingston 99U5428-018.A00LF 8GB
DSL Memory D4SS1G082SH21A-B 16GB
Report a bug
×
Bug description
Source link