RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3000C15-8GVS 8GB
Compare
takeMS International AG TMS2GB264D083805EV 2GB vs G Skill Intl F4-3000C15-8GVS 8GB
Overall score
takeMS International AG TMS2GB264D083805EV 2GB
Overall score
G Skill Intl F4-3000C15-8GVS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
Report a bug
Faster reading speed, GB/s
3
18.9
Average value in the tests
Reasons to consider
G Skill Intl F4-3000C15-8GVS 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
50
Around -85% lower latency
Faster write speed, GB/s
14.7
1,457.4
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3000C15-8GVS 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
50
27
Read speed, GB/s
3,757.3
18.9
Write speed, GB/s
1,457.4
14.7
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
557
3418
takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3000C15-8GVS 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
PUSKILL DDR3 1600 8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
Crucial Technology CT25664BA160B.C16F 2GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Ramsta Ramsta-2400Mhz-4G 4GB
Samsung M386B4G70DM0-CMA4 32GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-2400C15-8GFXR 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
Kingston HP32D4U8S8HC-8X 8GB
Kingston 99U5474-023.A00LF 4GB
G Skill Intl F4-2400C15-8GFXR 8GB
Kingston KHX1866C9D3/8GX 8GB
Corsair CMD16GX4M2B3866C18 8GB
Samsung M3 78T5663RZ3-CF7 2GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMT32GX4M2Z3600C18 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3200C15-16GVR 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-3333C16-8GVK 8GB
A-DATA Technology AD73I1C1674EV 4GB
Transcend Information TS1GLH64V1H 8GB
Report a bug
×
Bug description
Source link