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A-DATA Technology ADOVE1A0834E 1GB
Mushkin MRB4U300GJJM16G 16GB

A-DATA Technology ADOVE1A0834E 1GB vs Mushkin MRB4U300GJJM16G 16GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Mushkin MRB4U300GJJM16G 16GB

Mushkin MRB4U300GJJM16G 16GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Mushkin MRB4U300GJJM16G 16GB 需要考虑的原因
Mushkin MRB4U300GJJM16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 94
    左右 -292% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Mushkin MRB4U300GJJM16G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 24
  • 读取速度，GB/s
    1,882.0 left arrow 15.8
  • 写入速度，GB/s
    1,165.4 left arrow 12.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    305 left arrow 2761

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Mushkin MRB4U300GJJM16G 16GB RAM的比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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内存RAM
A-DATA Technology ADOVE1A0834E 1GB
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Mushkin MRB4U300GJJM16G 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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