Elpida EBJ10UE8BAFA-AE-E 1GB vs G Skill Intl F4-3000C15-8GVS 8GB

总分

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分

G Skill Intl F4-3000C15-8GVS 8GB

G Skill Intl F4-3000C15-8GVS 8GB

差异规格评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB

需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB

报告一个错误

G Skill Intl F4-3000C15-8GVS 8GB

需要考虑的原因
G Skill Intl F4-3000C15-8GVS 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 65

左右 -141% 更低的延时
更快的读取速度，GB/s

18.9 6.1

测试中的平均数值
更快的写入速度，GB/s

14.7 4.2

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Elpida EBJ10UE8BAFA-AE-E 1GB

G Skill Intl F4-3000C15-8GVS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 27
读取速度，GB/s

6.1 18.9
写入速度，GB/s

4.2 14.7
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

985 3418

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

G Skill Intl F4-3000C15-8GVS 8GB

G Skill Intl F4-3000C15-8GVS 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMA42GR7MFR4N-TF 16GB

SK Hynix HMA42GR7MFR4N-TF 16GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Corsair CMK16GX4M2E4333C19 8GB

Corsair CMK16GX4M2E4333C19 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

Nanya Technology NT512T64UH8B0FN-3C 512MB

Nanya Technology NT512T64UH8B0FN-3C 512MB

SK Hynix HMAA4GU6AJR8N-XN 32GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-4133C19-8GTZSWF 8GB

G Skill Intl F4-4133C19-8GTZSWF 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Samsung M471A2K43BB1-CPB 16GB

Samsung M471A2K43BB1-CPB 16GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Crucial Technology CT16G4DFD832A.M16FJ 16GB

Crucial Technology CT16G4DFD832A.M16FJ 16GB

Kingston 99U5428-101.A00LF 8GB

Kingston 99U5428-101.A00LF 8GB

Kingston 9905678-023.A00G 8GB

Kingston 9905678-023.A00G 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Golden Empire CL14-16-16 D4-2400 16GB

Golden Empire CL14-16-16 D4-2400 16GB