Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Samsung M393A5143DB0-CRC 4GB

总分

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

总分

Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

差异规格评论

差异

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 47

左右 45% 更低的延时
更快的读取速度，GB/s

12.3 10

测试中的平均数值

Samsung M393A5143DB0-CRC 4GB

需要考虑的原因
Samsung M393A5143DB0-CRC 4GB

报告一个错误

更快的写入速度，GB/s

7.5 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Samsung M393A5143DB0-CRC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 47
读取速度，GB/s

12.3 10.0
写入速度，GB/s

7.1 7.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1952 2308

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT16G4DFD824A.C16FE 16GB

Crucial Technology CT16G4DFD824A.C16FE 16GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

G Skill Intl F4-2800C15-4GVR 4GB

G Skill Intl F4-2800C15-4GVR 4GB

Apacer Technology 75.A73AA.G03 2GB

Apacer Technology 75.A73AA.G03 2GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

G Skill Intl F4-2666C19-8GVK 8GB

G Skill Intl F4-2666C19-8GVK 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HMA82GR7AFR4N-VK 16GB

SK Hynix HMA82GR7AFR4N-VK 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-3200C16-16GTZSW 16GB

G Skill Intl F4-3200C16-16GTZSW 16GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

G Skill Intl F4-3200C14-32GTRS 32GB

G Skill Intl F4-3200C14-32GTRS 32GB

Kingston KHX16 4GB

Kingston KHX16 4GB

Corsair CM4B4G1J2400A14K 4GB

Corsair CM4B4G1J2400A14K 4GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N

Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-3200C14-8GTRG 8GB

G Skill Intl F4-3200C14-8GTRG 8GB