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Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMK16GX4M4B3733C17 4GB

Samsung M3 78T5663RZ3-CE6 2GB vs Corsair CMK16GX4M4B3733C17 4GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Corsair CMK16GX4M4B3733C17 4GB

Corsair CMK16GX4M4B3733C17 4GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 20.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,168.2 left arrow 16.7
    测试中的平均数值
Corsair CMK16GX4M4B3733C17 4GB 需要考虑的原因
Corsair CMK16GX4M4B3733C17 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 60
    左右 -216% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMK16GX4M4B3733C17 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 19
  • 读取速度，GB/s
    4,595.2 left arrow 20.3
  • 写入速度，GB/s
    2,168.2 left arrow 16.7
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    941 left arrow 3485

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Corsair CMK16GX4M4B3733C17 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Samsung M391A2K43BB1-CTD 16GB
Samsung M391A2K43BB1-CTD 16GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Corsair CM4B8G1L2666A18S4 8GB
Corsair CM4B8G1L2666A18S4 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD32GX4M4B3866C18 8GB
Corsair CMD32GX4M4B3866C18 8GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Apacer Technology 78.CAGPN.AZ50C 8GB
Apacer Technology 78.CAGPN.AZ50C 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA82GS6AFR8N-UH 16GB
SK Hynix HMA82GS6AFR8N-UH 16GB
内存RAM
Ramaxel Technology RMT3010EC58E8F1333 2GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Mushkin 99[2/7/4]205[F/T] 8GB
Mushkin 99[2/7/4]205[F/T] 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
UMAX Technology D4-3200-16G-1024X8-L 16GB
UMAX Technology D4-3200-16G-1024X8-L 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT8G4DFS632A.M4FE 8GB
Crucial Technology CT8G4DFS632A.M4FE 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4SFS824A.C8FDR1 8GB
Crucial Technology CT8G4SFS824A.C8FDR1 8GB
内存RAM
Corsair CMD16GX3M2A1600C7 8GB
Corsair CMD16GX3M2A1600C7 8GB
Corsair CMT32GX4M2Z3200C16 16GB
Corsair CMT32GX4M2Z3200C16 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston HP32D4U8S8ME-8X 8GB
Kingston HP32D4U8S8ME-8X 8GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
内存RAM