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Samsung M391B5673EH1-CH9 2GB
SK Hynix HYMP525F72CP4D3-Y5 2GB

Samsung M391B5673EH1-CH9 2GB vs SK Hynix HYMP525F72CP4D3-Y5 2GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
SK Hynix HYMP525F72CP4D3-Y5 2GB

SK Hynix HYMP525F72CP4D3-Y5 2GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 79
    左右 67% 更低的延时
  • 更快的写入速度，GB/s
    9.0 left arrow 2,121.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    10600 left arrow 5300
    左右 2% 更高的带宽
SK Hynix HYMP525F72CP4D3-Y5 2GB 需要考虑的原因
SK Hynix HYMP525F72CP4D3-Y5 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 12.8
    测试中的平均数值

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
SK Hynix HYMP525F72CP4D3-Y5 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR2
  • PassMark中的延时，ns
    26 left arrow 79
  • 读取速度，GB/s
    12.8 left arrow 2,925.4
  • 写入速度，GB/s
    9.0 left arrow 2,121.4
  • 内存带宽，mbps
    10600 left arrow 5300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow no data
  • 排名PassMark (越多越好)
    2143 left arrow 750

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

SK Hynix HYMP525F72CP4D3-Y5 2GB RAM的比较

Apacer Technology GD2.111881.002 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston 99U5474-010.A00LF 2GB
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内存RAM
Samsung M391B5673EH1-CH9 2GB
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内存RAM
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内存RAM
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