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SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-3200C14-16GTZR 16GB

SK Hynix HMA451U6AFR8N-TF 4GB vs G Skill Intl F4-3200C14-16GTZR 16GB

总分
star star star star star
SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

总分
star star star star star
G Skill Intl F4-3200C14-16GTZR 16GB

G Skill Intl F4-3200C14-16GTZR 16GB

差异 规格 评论

差异

SK Hynix HMA451U6AFR8N-TF 4GB 需要考虑的原因
SK Hynix HMA451U6AFR8N-TF 4GB
报告一个错误
G Skill Intl F4-3200C14-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GTZR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 37
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    19.1 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 10.6
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-3200C14-16GTZR 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 26
  • 读取速度，GB/s
    14.7 left arrow 19.1
  • 写入速度，GB/s
    10.6 left arrow 15.9
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2438 left arrow 3876

SK Hynix HMA451U6AFR8N-TF 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3200C14-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Kingston MSI24D4S7D8MHMH6 16GB
Kingston MSI24D4S7D8MHMH6 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Corsair CMN32GX4M2Z4600C18 16GB
Corsair CMN32GX4M2Z4600C18 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3600C14-16GTZRA 16GB
G Skill Intl F4-3600C14-16GTZRA 16GB
内存RAM
Kingston 8ATF1G64HZ-2G3B2 8GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
内存RAM
PNY Electronics 64C0MHHHJ-HS 4GB
PNY Electronics 64C0MHHHJ-HS 4GB
A-DATA Technology EL63I1C1624ZV 4GB
A-DATA Technology EL63I1C1624ZV 4GB
内存RAM
Mushkin 99[2/7/4]199[F/T] 8GB
Mushkin 99[2/7/4]199[F/T] 8GB
Kingston KF548C38-16 16GB
Kingston KF548C38-16 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Transcend Information TS512MSH64V1H 4GB
Transcend Information TS512MSH64V1H 4GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
G Skill Intl F4-3200C18-8GRS 8GB
G Skill Intl F4-3200C18-8GRS 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
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Crucial Technology CT8G4SFD8213.C16FADP 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Micron Technology 9905625-004.A03LF 8GB
Micron Technology 9905625-004.A03LF 8GB
内存RAM