RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Compare
Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Overall score
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
37
Around -54% lower latency
Faster reading speed, GB/s
15.6
13.9
Average value in the tests
Faster write speed, GB/s
12.1
8.6
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
24
Read speed, GB/s
13.9
15.6
Write speed, GB/s
8.6
12.1
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2395
2852
Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM comparisons
SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
A-DATA Technology DDR3 1333G 2GB
Kingston 9905712-001.B00G 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-2133C15-4GRR 4GB
Micron Technology 36JSF2G72PZ-1G9E1 16GB
Samsung M393B2G70QH0-CMA 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMU16GX4M2A2666C16 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M2F4000C19 16GB
A-DATA Technology ADOVE1A0834E 1GB
V-GEN D4H4GL26A8TS5 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston KHX3600C17D4/8GX 8GB
Corsair CMD8GX3M2A2933C12 4GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-4000C18-32GTRS 32GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CM4X16GE2666C16K2 16GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-2666C15-8GRR 8GB
SK Hynix DDR2 800 2G 2GB
Team Group Inc. TEAMGROUP-UD4-2666 8GB
Report a bug
×
Bug description
Source link