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Samsung M378A1G43DB0-CPB 8GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Compare
Samsung M378A1G43DB0-CPB 8GB vs Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Overall score
Samsung M378A1G43DB0-CPB 8GB
Overall score
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1G43DB0-CPB 8GB
Report a bug
Below the latency in the PassMark tests, ns
36
52
Around 31% lower latency
Faster write speed, GB/s
10.3
10.1
Average value in the tests
Reasons to consider
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Report a bug
Faster reading speed, GB/s
20.5
15
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378A1G43DB0-CPB 8GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
36
52
Read speed, GB/s
15.0
20.5
Write speed, GB/s
10.3
10.1
Memory bandwidth, mbps
17000
17000
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2569
2472
Samsung M378A1G43DB0-CPB 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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calculate
Absolute Latency
0 ns
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