RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
Compare
Samsung M378B5773DH0-CH9 2GB vs Crucial Technology CT4G4DFS8266.M8FE 4GB
Overall score
Samsung M378B5773DH0-CH9 2GB
Overall score
Crucial Technology CT4G4DFS8266.M8FE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5773DH0-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
39
74
Around 47% lower latency
Reasons to consider
Crucial Technology CT4G4DFS8266.M8FE 4GB
Report a bug
Faster reading speed, GB/s
15.4
11.7
Average value in the tests
Faster write speed, GB/s
8.0
7.2
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
39
74
Read speed, GB/s
11.7
15.4
Write speed, GB/s
7.2
8.0
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1749
1714
Samsung M378B5773DH0-CH9 2GB RAM comparisons
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Crucial Technology CT4G4DFS8266.M8FE 4GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C17-8GNT 8GB
PNY Electronics PNY 2GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2400C14-16GRK 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
Kingston 9965525-155.A00LF 8GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
Elpida EBE21UE8ACUA-8G-E 2GB
A-DATA Technology ADOVF1A083FE 1GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905598-039.A00G 16GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3200C15-16GVR 16GB
Crucial Technology CT102464BA160B.M16 8GB
Apacer Technology 78.CAGP7.AZ20B 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-2933C14-16GFX 16GB
Report a bug
×
Bug description
Source link