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SK Hynix DDR2 800 2G 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

SK Hynix DDR2 800 2G 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Overall score
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Differences Specifications Comments

Differences

SK Hynix DDR2 800 2G 2GB Reasons to consider
SK Hynix DDR2 800 2G 2GB
Report a bug
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    56 left arrow 77
    Around -38% lower latency
  • Faster reading speed, GB/s
    20.1 left arrow 2
    Average value in the tests
  • Faster write speed, GB/s
    10.5 left arrow 1,884.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix DDR2 800 2G 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    77 left arrow 56
  • Read speed, GB/s
    2,936.9 left arrow 20.1
  • Write speed, GB/s
    1,884.0 left arrow 10.5
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    564 left arrow 2455

SK Hynix DDR2 800 2G 2GB RAM comparisons

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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