RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Compare
ASint Technology SSA302G08-EGN1C 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Overall score
ASint Technology SSA302G08-EGN1C 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
ASint Technology SSA302G08-EGN1C 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
27
Around 4% lower latency
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Report a bug
Faster reading speed, GB/s
15.3
12.6
Average value in the tests
Faster write speed, GB/s
11.2
9.5
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
27
Read speed, GB/s
12.6
15.3
Write speed, GB/s
9.5
11.2
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2174
2545
ASint Technology SSA302G08-EGN1C 4GB RAM comparisons
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB RAM comparisons
TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix HMA81GS6JJR8N-VK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-1333C9-4GIS 4GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Kingston 9905471-071.A00LF 8GB
Corsair CMK32GX4M4A2666C15 8GB
Corsair CMD8GX3M2A2933C12 4GB
G Skill Intl F4-3200C16-8GTZRX 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology GD2.1831WS.002 16GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Corsair CML16GX3M2A1600C10 8GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Golden Empire CL16-16-16 D4-3000 4GB
G Skill Intl F5-6400J3239G16G 16GB
Transcend Information AQD-D4U4GN21-SG 4GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3200C16-16GVS 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
SK Hynix HMA81GS6CJR8N-XN 8GB
A-DATA Technology DDR4 2400 16GB
Kingston CBD24D4S7D8ME-16 16GB
Report a bug
×
Bug description
Source link