RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
en
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hexon Technology Pte Ltd HEXON 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Hexon Technology Pte Ltd HEXON 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Overall score
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Differences Specifications Comments

Differences

Hexon Technology Pte Ltd HEXON 1GB Reasons to consider
Hexon Technology Pte Ltd HEXON 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 15.6
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 62
    Around -138% lower latency
  • Faster write speed, GB/s
    11.8 left arrow 1,843.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
Hexon Technology Pte Ltd HEXON 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    62 left arrow 26
  • Read speed, GB/s
    3,556.6 left arrow 15.6
  • Write speed, GB/s
    1,843.6 left arrow 11.8
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    542 left arrow 2382

Hexon Technology Pte Ltd HEXON 1GB RAM comparisons

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB RAM comparisons

Samsung M393B2G70BH0-CH9 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Panram International Corporation PUD42400C154GNJW 4GB
Panram International Corporation PUD42400C154GNJW 4GB
Memory RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
Memory RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston HX426C16FB2/8-SP 8GB
Kingston HX426C16FB2/8-SP 8GB
Memory RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Ramaxel Technology RMSA3300ME78HBF-2666 16GB
Ramaxel Technology RMSA3300ME78HBF-2666 16GB
Memory RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
Memory RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston KHX2933C17S4/8G 8GB
Kingston KHX2933C17S4/8G 8GB
Memory RAM
Samsung M471B5673FH0-CH9 2GB
Samsung M471B5673FH0-CH9 2GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
Crucial Technology BLS4G4D26BFSC.8FBD2 4GB
Memory RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Memory RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
Memory RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Memory RAM
Kingston ACR26D4S9S1KA-4 4GB
Kingston ACR26D4S9S1KA-4 4GB
Samsung M471A5244CB0-CTD 4GB
Samsung M471A5244CB0-CTD 4GB
Memory RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3300C16-16GTZKW 16GB
G Skill Intl F4-3300C16-16GTZKW 16GB
Memory RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
Memory RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Memory RAM