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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
62
Around -148% lower latency
Faster reading speed, GB/s
15.9
7.4
Average value in the tests
Faster write speed, GB/s
12.0
5.9
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
25
Read speed, GB/s
7.4
15.9
Write speed, GB/s
5.9
12.0
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 12 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1612
3023
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM comparisons
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Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB RAM comparisons
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Samsung M393B5170EH1-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
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