RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT16G4DFD8266.M16FJ 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Reasons to consider
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Report a bug
Faster reading speed, GB/s
17.4
16
Average value in the tests
Faster write speed, GB/s
13.0
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
17.4
Write speed, GB/s
12.5
13.0
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
3398
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB RAM comparisons
Crucial Technology BLS8G4S240FSD.16FBD2 8GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFD8266.M16FJ 16GB
G Skill Intl F3-1600C11-4GIS 4GB
Crucial Technology CT16G4SFD824A.C16FDD 16GB
Samsung M471B5773DH0-CK0 2GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
Kingston 9905403-444.A00LF 4GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMK64GX4M2A2666C16 32GB
Kingston 99P5474-014.A00LF 4GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-2400C17-8GSXK 8GB
Kingmax Semiconductor FLFF65F-C8KM9 4GB
Kingston 9965604-008.C00G 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMK16GX4M2E4333C19 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4DFD832A.C16FJ 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Essencore Limited IM48GU48N28-GGGHM 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4266C19-4GTZ 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
Samsung M471B5173QH0-YK0 4GB
Kingston KHX2133C15S4/8G 8GB
Report a bug
×
Bug description
Source link