RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Compare
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Chun Well Technology Holding Limited D4U1636144B 16GB
Overall score
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Overall score
Chun Well Technology Holding Limited D4U1636144B 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited D4U1636144B 16GB
Report a bug
Below the latency in the PassMark tests, ns
26
35
Around -35% lower latency
Faster reading speed, GB/s
23.7
13.7
Average value in the tests
Faster write speed, GB/s
18.3
9.6
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
35
26
Read speed, GB/s
13.7
23.7
Write speed, GB/s
9.6
18.3
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2312
4124
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM comparisons
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Chun Well Technology Holding Limited D4U1636144B 16GB RAM comparisons
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773CH0-CH9 2GB
G Skill Intl F4-3200C16-8GTRS 8GB
Kingston KVT8FP-HYC 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Kingston 9905584-016.A00LF 4GB
Kingston 9965639-002.A01G 8GB
A-DATA Technology DQKD1A08 1GB
Kingston MSI26D4S9S8HJ-8 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3200C15-4GRKD 4GB
G Skill Intl F4-2133C15-16GFT 16GB
G Skill Intl F4-2400C16-4GFX 4GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BL8G30C15U4BL.M8FE1 8GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-4000C18-16GTZR 16GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Kingston KHX2666C13D4/4GX 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C17-16GTZRB 16GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kingston KHX2666C16D4/32GX 32GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-2800C15-16GRKD 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M47472K43DB1-CTD 16GB
Report a bug
×
Bug description
Source link